| ‘? I FES8xT, FESF8xT, FESB8xT7 www'V'Shay'C°m Vishay General Semiconductor ELEcTRIcAL cHARAcTERIsTIcs (To = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Max. instantaneous forward voltage W Max. DC reverse current at rated DCTC : 100 blocking voltageMax. reverse recovery IF: 0.5 A, IR : 1.0 time I": 0.25 A Typical junction 4 0 V 1 MHZ capacitance ' ’ Nate(i) Pulse test: 300 us pulse width, 1 % duty Cycle PARAMETER Typical thermal resistance from junction to Case N (ExamTo-22oAc Erlmji ITO-22oAc mmzji To-263AB jrtmjti To-2s3AB To-22oAc EI?j￡ ITO-22oAc ?i?jta To-2s3AB Emsji To-2s3AB N ate (ll AEC-Q101 quamed RATINGS AND cHARAcTERIsTIcs cuRvEs (TA = 25 0C unless otherwise noted) 3150Tc: l00"C Heslslwe or Inductive Load ‘25 .3 ms single Hall sinewaveE ‘|III‘III- loo m:3Peak Forward Surge Current (A) N \l m m Average Forward Rectiiied Current (A) 0 so too 150 l to 100 Temperature (”C) Number ol Cycles at 60 Hz Fig. 1 - Max. Forward Current Derating Cun/e Fig. 2 - Max. Non-Repetitive Peak FonNard Surge Current Revision: 20-Aug-13 2 Document Number: 88600 For technical questions within your region: DiodesArnericas@vishay.Corn, DiodesAsia@vishay.Com, DiodesEurope@Vishay.Com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vIsha . om doc?9100 |